irfhm8342trpbf 1 www.irf.com ? 2013 international rectifier august 22, 2013 hexfet ? power mosfet base part number package type standard pack orderable part number ? ? form quantity IRFHM8342PBF pqfn 3.3mm x 3.3mm tape and reel 4000 irfhm8342trpbf v dss 30 v r ds(on) max (@ v gs = 10v) 16 ? (@ v gs = 4.5v) 25 qg (typical) 5.0 nc i d (@t c (bottom) = 25c) 20 ? a m ??? ? features benefits low charge (typical 5.2 nc) low switching losses low thermal resistance to pcb (<6.2c/w) enable better thermal dissipation low profile (<0.9 mm) results in increased power density industry-standard pinout ?? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, consumer qualification increased reliability notes ? through ? are on page 8 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 10 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 28 ?? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 18 ? i dm pulsed drain current ? 112 p d @t a = 25c power dissipation ? 2.6 w p d @t c(bottom) = 25c power dissipation 20 linear derating factor 0.020 w/c t j operating junction and -55 to + 150 c t stg storage temperature range i d @ t c = 25c continuous drain current, v gs @ 10v (source bonding technology limited) 20 ? applications ?? control mosfet for synchronous buck converter ?? load switch ? pqfn 3.3 x 3.3 mm top view 3 2 1 8 7 6 5 4 d d d d s s s g
2 www.irf.com ? 2013 international rectifier august 22, 2013 ? irfhm8342trpbf d s g static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 20 ??? mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 13 16 m ? v gs = 10v, i d = 17a ? ??? 20 25 v gs = 4.5v, i d = 14a ? v gs(th) gate threshold voltage 1.35 1.8 2.35 v v ds = v gs , i d = 25a ? v gs(th) gate threshold voltage coefficient ??? -5.2 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 24v, v gs = 0v i gss gate-to-source forward l eakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v gfs forward transconductance 19 ??? ??? s v ds = 10v, i d = 17a q g total gate charge ??? 10 ??? nc v gs = 10v, v ds = 15v, i d = 17a q g total gate charge ??? 5.0 7.5 v ds = 15v q gs pre-vth gate-to-source charge ??? 1.8 ??? nc v gs = 4.5v q gd gate-to-drain charge ??? 1.7 ??? i d = 17a q godr gate charge overdrive ??? 1.5 ??? ? q oss output charge ??? 3.3 ??? nc v ds = 16v, v gs = 0v r g gate resistance ??? 2.6 ??? ? ? t d(on) turn-on delay time ??? 8.1 ??? v dd = 15v, v gs = 4.5v t r rise time ??? 30 ??? ns i d = 17a t d(off) turn-off delay time ??? 7.6 ??? ? r g =1.8 ? t f fall time ??? 5.6 ??? ? c iss input capacitance ??? 560 ??? v gs = 0v c oss output capacitance ??? 102 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 48 ??? ? ? = 1.0mhz ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? ??? 6.2 r ? jc (top) junction-to-case ? ??? 50 c/w r ? ja junction-to-ambient ? ??? 49 r ? ja (<10s) junction-to-ambient ? ??? 34 thermal resistance diode characteristics ???? parameter min. typ. max. units conditions i s continuous source current ??? ??? 20 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 112 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.0 v t j = 25c, i s = 17a, v gs = 0v ? t rr reverse recovery time ??? 9.4 14 ns t j = 25c, i f = 17a, v dd = 15v q rr reverse recovery charge ??? 5.8 8.7 nc di/dt = 330a/s ? avalanche characteristics parameter typ. max. units e as single pulse avalanche energy ? ??? 21 mj
3 www.irf.com ? 2013 international rectifier august 22, 2013 ? irfhm8342trpbf 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.25v 3.0v bottom 2.75v ? 60s pulse width tj = 25c 2.75v fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 02468101214 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 17a fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.75v ? 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.25v 3.0v bottom 2.75v fig 2. typical output characteristics 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 17a v gs = 10v
4 www.irf.com ? 2013 international rectifier august 22, 2013 ? irfhm8342trpbf fig 8. maximum safe operating area 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v fig 7. typical source-drain diode forward voltage fig 9. maximum drain current vs. case temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 10. drain-to-source breakdown voltage fig 11. maximum effective transient thermal impedance, junction-to-case 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 30 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 250a i d = 1.0ma i d = 1.0a
5 www.irf.com ? 2013 international rectifier august 22, 2013 ? irfhm8342trpbf fig 12. on?resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. single avalanche event: puls e current vs. pulse width 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 10 20 30 40 50 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 17a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.8a 5.9a bottom 17a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche cu rrent vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse)
6 www.irf.com ? 2013 international rectifier august 22, 2013 ? irfhm8342trpbf fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 19. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms vdd ?
7 www.irf.com ? 2013 international rectifier august 22, 2013 ? irfhm8342trpbf the typical application topology for this product is the synchronous buck converter. thes e converters operate at high frequencies (typically around 400 khz). during turn-on and turn-o ff switching cycles, the high di/dt currents circulating in the parasitic elements of the circuit induce high vo ltage ringing which may exceed the device rating and lead to undesirable effects. one of the major contributors to the incr ease in parasitics is the pc b power circuit inductance. this section introduces a simple guideline that mitigates the e ffect of these parasitics on t he performance of the circuit and provides reliable operation of the devices. to reduce high frequency switching noise and the effects of electromagnetic interference (emi) when the control mosfet (q1) is turned on, the layout shown in figur e 20 is recommended. the input bypass capacitors, control mosfet and output capacitors are placed in a tight loop to minimize parasitic inductance which in turn lowers the amplitude of the switch node ringing, and minimizes expos ure of the mosfets to repet itive avalanche conditions. fig 20. placement and layout guidelines placement and layout guidelines
8 www.irf.com ? 2013 international rectifier august 22, 2013 ? irfhm8342trpbf note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 3.3 x 3.3 package details pqfn 3.3 x 3.3 part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techni ques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf
9 www.irf.com ? 2013 international rectifier august 22, 2013 ? irfhm8342trpbf qualification information ? ? qualification level ? moisture sensitivity level pqfn 3.3mm x 3.3mm msl1 (per jedec j-std-020d ??) rohs compliant yes consumer (per jedec jesd47f ?? guidelines) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ pqfn 3.3 x 3.3 tape and reel ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release. notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 0.15mh, r g = 50 ? , i as = 17a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at t j of approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on maxi mum allowable junction temperature. ? current is limited to 20a by source bonding technology. note: for the most current drawing please refer to ir website at http://www.irf.com/package/ camber note: 1. dimension measured on the bottom of the cavity. 2. pitch tolerance over any 10 pitches = 0.008 [0.2] 3. esd requirement: 0200volts 4. surface resistivity = 10 to 10 ohms per square inch 5. roll should contain splice-free material 6. engrave resy symbol every 100 sprockets (about 15.75 [400] ( conform supplier specification) ps the camber shall not exceed in 1mm/250
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